2sk3748 no.8250-1/4 features ? low on-resistance, low input capacitance, ultrahigh-speed switching. ? high reliability (adoption of hvp process). ? attachment workability is good by mica-less package. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 1500 v gate-to-source voltage v gss 20 v drain current (dc) i d * 4a drain current (pulse) i dp pw10 m s, duty cycle 1% 8 a allowable power dissipation p d 3.0 w tc=25 c65w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 170 mj avalanche current *2 i av 4a * shows chip capability * 1 v dd =99v, l=20mh, i av =4a * 2 l 20mh, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 1500 v zero-gate voltage drain current i dss v ds =1200v, v gs =0v 100 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 2.5 3.5 v forward transfer admittance ? yfs ? v ds =20v, i d =2a 1.7 2.8 s static drain-to-source on-state resistance r ds (on) i d =2a, v gs =10v 5 7 w marking : k3748 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8250a any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 72905 ms im tb-00001688 / 31005qb ts im tb-00001272 2sk3748 n-channel silicon mosfet high-voltage, high-speed switching applications
2sk3748 no.8250-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =30v, f=1mhz 790 pf output capacitance coss v ds =30v, f=1mhz 140 pf reverse transfer capacitance crss v ds =30v, f=1mhz 70 pf turn-on delay time t d (on) see specified test circuit. 17 ns rise time t r see specified test circuit. 75 ns turn-off delay time t d (off) see specified test circuit. 360 ns fall time t f see specified test circuit. 116 ns total gate charge qg v ds =200v, v gs =10v, i d =4a 80 nc gate-to-source charge qgs v ds =200v, v gs =10v, i d =4a 6.4 nc gate-to-drain miller charge qgd v ds =200v, v gs =10v, i d =4a 36 nc diode forward voltage v sd i s =4a, v gs =0v 0.94 1.2 v reverse recovery time t rr i s =4a, v gs =0v, dis/dt=100a/ m s340ns note) although the protection diode is contained between gate and source, be careful of handling enough. package dimensions unit : mm 7505-003 switching time test circuit avalanche resistance test circuit 16.0 5.6 3.1 2.0 2.0 123 2.8 2.0 5.45 5.45 22.0 20.4 1.0 0.6 4.0 21.0 5.0 8.0 3.5 3.4 1 : gate 2 : drain 3 : source sanyo : to-3pml pw=10 m s d.c. 0.5% p. g r gs 50 w g s d i d =2a r l =100 w v dd 200v v out 2sk3748 v in 10v 0v v in 50 w rg 3 50 w v dd l 10v 0v 2sk3748
2sk3748 no.8250-3/4 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it09205 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it09206 gate-to-source voltage, v gs -- v r ds (on) -- v gs it09207 case temperature, tc -- c r ds (on) -- tc it09208 --50 --25 0 25 50 75 100 125 150 0 0 8 7 6 5 4 3 70 50 60 40 10 30 20 2 1 0 0 7 20 18 16 412 210 68 14 1 2 3 4 5 6 0 16 10 12 14 4 8 6 2 it09210 0 0.3 0.6 0.9 1.5 1.2 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 2 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a it09209 forward transfer admittance, ? y fs ? -- s 0.1 23 57 23 57 1.0 1.0 2 3 5 7 2 3 7 5 0.1 0 0 14 10 12 8 6 20 18 16 412 210 68 14 4 2 drain current, i d -- a sw time -- i d switching time, sw time -- ns it09211 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it09212 tc=25 c 10v 8v v gs =4v 5v 6v v ds =20v tc= --25 c 25 c 75 c i d =2a 25 c tc=75 c --25 c i d = 2 a v gs =10v v ds = 20v 25 c tc= --25 c 75 c 25 c --25 c tc=75 c v gs =0v static drain-to-source on-state resistance, r ds (on) -- w static drain-to-source on-state resistance, r ds (on) -- w 100 1000 10 3 2 3 2 5 5 7 7 0.1 1.0 23 57 3 2 v dd =200v v gs =10v t d (off) t f t r t d (on) 0 7 100 10 1000 10000 7 5 5 7 3 2 5 3 2 3 2 50 30 5152025354045 10 f=1mhz ciss coss crss ? y fs ? -- i d
2sk3748 no.8250-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2005. specifications and information herein are subject to change without notice. a s o drain-to-source voltage, v ds -- v drain current, i d -- a 1.0 10 2 3 5 7 2 3 5 7 2 2 3 5 7 0.1 0.01 23 57 23 57 23 57 1.0 10 100 1000 3 2 it09214 it09213 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it09215 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w it09216 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0 1 2 3 4 5 6 7 8 90 40 50 60 70 80 10 9 10 20 30 v ds =200v i d =4a <10 m s operation in this area is limited by r ds (on). 100 m s 1ms 10ms 100ms i d =4a i dp =8a dc operation tc=25 c single pulse 0 20 40 60 80 100 120 140 160 0 0.5 1.0 2.0 1.5 3.0 2.5 3.5 0 10 20 40 30 60 65 70 50 80 0 20 40 60 80 100 120 140 160 note on usage : since the 2sk3748 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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